Description:
Ti:Sapphire Crystal Titanium Doped Sapphire
Ti:Sapphire crystal product, also known as titanium doped sapphire crystal, with the chemical formula of Ti3+:Al2O3. It is a transition metal doped laser crystal with good comprehensive performance.
As an optically pumped solid-state laser crystal, Ti-doped sapphire is widely used in wavelength tunable lasers. The tunable range is 650-1100 nm and the peak value is 800 nm. It is the widest wavelength tunable laser crystal.
Ti3+ ions have very large gain bandwidth, which opens the possibility of obtaining very wide wavelength tunability in short pulse lasers. The upper state lifetime of Ti: sapphire is as short as 3.2 μs. because of its high saturated power. It is generally used as a lamp, an argon ion laser or a frequency double pumped Nd:YAG laser.
Using self mode locking technology, Ti: sapphire laser can directly output laser pulses with a pulse width of less than 6.5 fs, which is the narrowest laser pulse of all lasers directly output from the resonator. Through the dual frequency technology, the wavelength of the laser beam can cover the wideband from blue to deep UV.
The 193 nm laser produced has been used in the lithography machine. The product has the characteristics of short service life and high saturation power. It can be used in lamps, argon ion lasers or frequency double pumped Nd:YAG lasers.
Applications:
- Femtosecond Pulse Laser Material.
- Tunable Output – 650 nm to 1100 nm.
- Excellent Output Efficiency
- Doubling by NLO crystals such as BBO in an ultra-thin, Ti:Sapphire can be used to generate UV and DUV (up to 193 nm ) laser with ultrafast pulses below 10fs.
- Ti:Sapphire is also widely used as the pump source of OPOs to expand the tunable range.
Optical and spectral properties of Tisapphire
| Absorption range | 400 – 600 nm |
| Tuning range | 660 – 1050 nm |
| Emission peak | 795 nm |
| Absorption peak | 488 nm |
| Absorption cross-section at peak wavelength | 38×10-20 cm2 |
| Emission Cross-section | Σ532nm = 4.9 x 10-20 cm2 |
| Emission Cross-section | Σ490nm = 6.4 x 10-20 cm2 |
| Emission cross-section @790 nm | Σ790nm = 41×10-20 cm2 |
| dn/dT | 13×10-6 K-1 |
| Thermal conductivity | 33 Wm-1K-1 |
| Laser action | 4-level vibronic |
| Fluorescence lifetime | 3.2 µs (T=300K) |
| Refractive index | 1.76 @ 800 nm |
| Chemical formula | Ti3+:Al2O3 |
| Crystal structure | Hexagonal a=4.758, c=12.991 |
| Density | 3.98 g/cm3 |
| Melting point | 2040℃ |
| Mohs hardness | 9 |
AOST offers Tisapphire specifications:
| Orientation: | Optical axis C normal to rod axis |
| Ti2O3 concentration: | 0.03 – 0.25wt % |
| Figure Of Merit (FOM): | 100~250 Upon customers request |
| End configurations: | Flat/Flat or Brewster/Brewster ends |
| Flatness: | l /8 ~1/10@ 633 nm |
| Parallelism: | 10 arc sec |
| Surface finishing: | 10/5 scratch/dig to MIL-O-13830A |
| Clear Aperture: | > 90% |
| Chamfer: | < 0.1 mm @ 45deg. |
| Size | Upon customer request |
| Coating | AR/HR coating upon customer’s request |
| Damage Threshold | 750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz |
| Quality Warranty Period | One year under proper use |
